Skip to main content
Vishay SIR4606DP-T1-GE3

Vishay SIR4606DP-T1-GE3

MPNSIR4606DP-T1-GE3
End of Life

N-CHANNEL 60 V (D-S) MOSFET POWE

$1.28Ref. price · indicative, final on quote
PackagingPowerPAK® SO-8
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SIR4606DP-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)7.5V, 10V
Current - continuous drain (Id) @ 25°C10.5A (Ta), 16A (Tc)
Power dissipation3.7W (Ta), 31.2W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® SO-8
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs18.5mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs13.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds540 pF @ 30 V