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Vishay SIR188LDP-T1-RE3

Vishay SIR188LDP-T1-RE3

MPNSIR188LDP-T1-RE3
End of Life

N-CHANNEL 60-V (D-S) MOSFET POWE

$1.51Ref. price · indicative, final on quote
PackagingPowerPAK® SO-8
SeriesTrenchFET® Gen IV
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SIR188LDP-T1-RE3 specifications
ParameterValue
SeriesTrenchFET® Gen IV
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C25.8A (Ta), 93.6A (Tc)
Power dissipation5W (Ta), 65.7W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® SO-8
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs3.75mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs52 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2300 pF @ 30 V