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Vishay SIR178DP-T1-RE3

Vishay SIR178DP-T1-RE3

MPNSIR178DP-T1-RE3
End of Life

MOSFET N-CH 20V 100A/430A PPAK

$1.76Ref. price · indicative, final on quote
PackagingPowerPAK® SO-8
RoHSROHS3 Compliant
SeriesTrenchFET® Gen IV
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SIR178DP-T1-RE3 specifications
ParameterValue
SeriesTrenchFET® Gen IV
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 10V
Current - continuous drain (Id) @ 25°C100A (Ta), 430A (Tc)
Power dissipation6.3W (Ta), 104W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+12V, -8V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® SO-8
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs0.4mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs310 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds12430 pF @ 10 V