Vishay SIR1309DP-T1-GE3
MPNSIR1309DP-T1-GE3
End of Life
P-CHANNEL 30 V (D-S) MOSFET POWE
$0.96Ref. price · indicative, final on quote
PackagingPowerPAK® SO-8
SeriesTrenchFET® Gen IV
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® Gen IV |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 19.1A (Ta), 65.7A (Tc) |
| Power dissipation | 4.8W (Ta), 56.8W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | PowerPAK® SO-8 |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 7.3mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 87 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3250 pF @ 15 V |