SIJH112E-T1-GE3
Vishay
MOSFET N-CH 100V 23A/225A PPAK
[IN STOCK] In Stock: 4 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Current - continuous drain (Id) @ 25°C | 23A (Ta), 225A (Tc) |
| Power dissipation | 3.3W (Ta), 333W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 2.8mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 160 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 8050 pF @ 50 V |
SIJH112E-T1-GE3
[ALLOC] verified