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Vishay SIJA22DP-T1-GE3

SIJA22DP-T1-GE3

MPNSIJA22DP-T1-GE3
End of Life

MOSFET N-CH 25V 64A/201A PPAK

$1.41Ref. price · indicative, final on quote
PackagingPowerPAK® SO-8
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SIJA22DP-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage25 V
Current - continuous drain (Id) @ 25°C64A (Ta), 201A (Tc)
Power dissipation4.8W (Ta), 48W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+20V, -16V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® SO-8
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs0.74mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs125 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6500 pF @ 15 V