SIJ438ADP-T1-GE3 - Vishay
MPNSIJ438ADP-T1-GE3
End of Life
MOSFET N-CH 40V 45.3A/169A PPAK
$1.68Ref. price · indicative, final on quote
PackagingPowerPAK® SO-8
RoHSROHS3 Compliant
SeriesTrenchFET® Gen IV
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® Gen IV |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 45.3A (Ta), 169A(Tc) |
| Power dissipation | 5W (Ta), 69.4W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +20V, -16V |
| Technology | MOSFET (Metal Oxide) |
| Case | PowerPAK® SO-8 |
| Vgs(th) (Max) @ id | 2.4V @ 250µA |
| Rds on (Max) @ id, vgs | 1.35mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 162 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7800 pF @ 20 V |