Skip to main content
Log in
Vishay SIHP6N80E-BE3 — Discrete Semiconductors

Vishay SIHP6N80E-BE3 N-Channel MOSFET, 800 V, 5.4 A, TO-220

MPNSIHP6N80E-BE3
End of Life

Vishay E Series, N-Channel MOSFET, 800 V Vdss, 5.4 A Id, 940 mOhm Rds(on), TO-220-3 (TO-220AB) through-hole package, Tube.

$2.48Ref. price · indicative, final on quote
Vishay SIHP6N80E-BE3 datasheet (PDF)
PackagingTO-220-3
SeriesE
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

SIHP6N80E-BE3 specifications
ParameterValue
SeriesE
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5.4A (Tc)
Power dissipation78W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs940mOhm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs44 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds827 pF @ 100 V

Product details

800 V N-channel MOSFET for offline power conversion

The Vishay SIHP6N80E-BE3 is an 800 V N-channel MOSFET from the E series, housed in a TO-220-3 (TO-220AB) through-hole package.

Switching and drive parametrics for the BOM

Gate charge totals 44 nC at 10 V — the gate driver must supply this charge within the target switching interval; a 1 A driver charges the gate in roughly 44 ns, but the practical switching speed is also limited by the 827 pF input capacitance at 100 V Vds. The 4 V threshold voltage at 250 µA drain current means a standard 10 V gate drive fully enhances the channel; a 5 V logic-level drive would leave the FET in the linear region with higher conduction loss. Maximum gate-source voltage is ±30 V, so the device tolerates the overshoot typical in hard-switched bridges without external clamping, provided the ringing stays within that window.

Thermal and environmental envelope

Maximum power dissipation is 78 W at case temperature, derated per the junction-to-case thermal resistance.

Active lifecycle and supply posture

Sourced to order against BOM quantities; availability and current pricing confirmed at RFQ.

Frequently asked questions

Will SIHP6N80E-BE3 drop into a board originally laid out for SIHP15N80AE-GE3?

Both parts share the same TO-220-3 (TO-220AB) through-hole package and ±30 V gate rating, so the footprint is identical. The SIHP15N80AE-GE3 carries a 13 A continuous drain rating and 350 mOhm Rds(on) — roughly 2.4× the current and 2.7× lower on-resistance — so it is a higher-current sibling, not a direct functional replacement for the same BOM position unless the lower Rds(on) is acceptable and the higher current rating is not exceeded.