Skip to main content
Vishay SIHP6N40D-BE3 — Discrete Semiconductors

Vishay SIHP6N40D-BE3 N-Channel MOSFET, 400 V, 6 A, TO-220

MPNSIHP6N40D-BE3
End of Life

Vishay SIHP6N40D-BE3 N-Channel MOSFET, 400 V Vdss, 6 A Id, 1 Ohm Rds(on), TO-220-3, Tube.

$1.16Ref. price · indicative, final on quote
PackagingTO-220-3
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

SIHP6N40D-BE3 specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage400 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation104W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs1Ohm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs18 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds311 pF @ 100 V

Product details

The SIHP6N40D-BE3: That voltage class puts it squarely into offline flyback converters, 2-switch forward converters, and 400 V DC-link auxiliary supplies — any rail where the bus sits at 300-400 VDC and the switch must survive transients above the nominal. The 6 A current ceiling at 25°C case means the part handles a 400 W output in a single-switch forward topology at 80% efficiency before derating for ambient temperature and switching losses.

Active lifecycle — no migration pressure on the BOM

The -BE3 suffix indicates the lead-free, RoHS-compliant version. The functionally identical peer SIHP6N40D-GE3 shares the same die, same ratings, and same TO-220AB package — the only difference is the suffix, so if your BOM was specified around the -GE3 variant, the -BE3 drops in without a board spin or parametric change.

Package and thermal integration

The TO-220-3 (supplier device package TO-220AB) through-hole package mounts into a standard 0.100-inch pitch footprint with a tab that bolts to a heatsink. The ±30 V maximum gate-source rating gives generous headroom above the 10 V drive voltage used to achieve minimum Rds(on). That margin absorbs gate-drive overshoot from parasitic inductance in the gate loop without risking oxide breakdown — a real concern in hard-switching layouts with long PCB traces between the controller and the MOSFET.

Frequently asked questions

Will SIHP6N40D-BE3 drop into a panel that was specified around SIHP6N40D-GE3 without rewiring?

Yes. The SIHP6N40D-GE3 is the functionally identical peer — same die, same 400 V Vdss, same 6 A Id, same 1 Ohm Rds(on), same TO-220AB package. The only difference is the suffix; the -BE3 is the lead-free version. No board change or rewiring is required.