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Vishay SIHP25N60EFL-BE3 — Discrete Semiconductors

Vishay SIHP25N60EFL-BE3 N-Channel MOSFET, 600 V, 25 A

MPNSIHP25N60EFL-BE3
End of Life

Vishay E Series SIHP25N60EFL-BE3 N-Channel MOSFET, 600 V Vdss, 25 A Id, 146 mOhm Rds(on), TO-220-3, Through Hole, Tube.

$4.82Ref. price · indicative, final on quote
Vishay SIHP25N60EFL-BE3 datasheet (PDF)
PackagingTO-220-3
SeriesE
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

SIHP25N60EFL-BE3 specifications
ParameterValue
SeriesE
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C25A (Tc)
Power dissipation250W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs146mOhm @ 12.5A, 10V
Gate charge (Qg) (Max) @ vgs75 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2274 pF @ 100 V

Product details

Active N-channel 600 V MOSFET in the TO-220 footprint

The SIHP25N60EFL-BE3: The 146 mOhm maximum on-resistance at 12.5 A with a 10 V gate drive sets the conduction loss budget for the design. Housed in the through-hole TO-220-3 package (supplier device package TO-220AB), this is a standard footprint for board-level power stages in switch-mode supplies, motor drives, and high-voltage DC-DC converters.

Gate drive and switching loss — what the numbers mean

Total gate charge is 75 nC at Vgs = 10 V, and input capacitance is 2274 pF measured at Vds = 100 V. These two numbers drive the gate-driver selection: a driver sourcing 1 A charges the gate in roughly 75 ns, but the actual switching loss depends on the Miller plateau and the driver's sink current. The 75 nC figure is moderate for a 600 V / 25 A device — a typical 2 A gate driver handles it without excessive crossover loss. The maximum gate-source voltage is ±30 V, and the recommended drive voltage for minimum Rds(on) is 10 V.

Frequently asked questions

What is the closest functional second-source for the SIHP25N60EFL-BE3?

The SIHG32N50D-GE3 is a peer N-channel MOSFET in the same TO-220 footprint, but it is rated for 500 V drain-to-source voltage and 30 A continuous drain current, versus 600 V and 25 A for the SIHP25N60EFL-BE3. The Rds(on) is 150 mOhm at 16 A / 10 V, very close to the 146 mOhm of this part. If the design can tolerate 500 V and the higher current rating, it is a drop-in mechanical fit — same package, same pinout — but the voltage margin is different.