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Vishay SIHP25N50E-GE3

Vishay SIHP25N50E-GE3

MPNSIHP25N50E-GE3
End of Life

MOSFET N-CH 500V 26A TO220AB

$3.27Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SIHP25N50E-GE3 specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C26A (Tc)
Power dissipation250W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs145mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs86 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1980 pF @ 100 V