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Vishay SIHP21N80AE-GE3

Vishay SIHP21N80AE-GE3

MPNSIHP21N80AE-GE3
End of Life

MOSFET N-CH 800V 17.4A TO220AB

$4.43Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesE
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SIHP21N80AE-GE3 specifications
ParameterValue
SeriesE
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17.4A (Tc)
Power dissipation32W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs235mOhm @ 11A, 10V
Gate charge (Qg) (Max) @ vgs72 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1388 pF @ 100 V