500 V, 10.5 A N-Channel — switching-stage workhorse
The SIHP12N50E-BE3 is a 500 V N-channel enhancement-mode MOSFET from Vishay's E series, rated for 10.5 A continuous drain current at a 25°C case temperature and 114 W maximum power dissipation. The 886 pF input capacitance at 100 V Vds gives a turn-on delay of roughly 44 ns with a 1 A gate-drive source — fast enough for hard-switching topologies up to 200 kHz without excessive cross-conduction.
Package and thermal integration
Housed in a TO-220-3 through-hole package (supplier device package TO-220AB), the SIHP12N50E-BE3 mounts into a standard 0.100-inch pitch footprint with the drain tab as the center lead and the heat-transfer path. The 114 W power dissipation rating assumes the tab is bolted to a heatsink with thermal compound — without a heatsink, the junction-to-ambient thermal resistance limits continuous dissipation to roughly 2 W in still air at 25°C ambient. The 4 V maximum gate threshold at 250 µA means a 5 V logic-level gate drive will barely turn the device on; the specified Rds(on) is guaranteed only at 10 V gate drive, so the gate supply rail must deliver at least 10 V for the full current rating.
Lifecycle and compliance posture
Shipped in tube packaging per the standard TO-220-3 format.