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Vishay SIHL620S-GE3

Vishay SIHL620S-GE3

MPNSIHL620S-GE3
End of Life

LOGIC MOSFET N-CHANNEL 200V

$0.92Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SIHL620S-GE3 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C5.2A (Tc)
Power dissipation3.1W (Ta), 50W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±10V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs800mOhm @ 3.1A, 10V
Gate charge (Qg) (Max) @ vgs16 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds360 pF @ 25 V