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Vishay SIHH080N60E-T1-GE3

Vishay SIHH080N60E-T1-GE3

MPNSIHH080N60E-T1-GE3
End of Life

E SERIES POWER MOSFET POWERPAK 8

$4.93Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesE
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SIHH080N60E-T1-GE3 specifications
ParameterValue
SeriesE
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C32A (Tc)
Power dissipation184W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs80mOhm @ 17A, 10V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2557 pF @ 100 V