SIHH080N60E-T1-GE3

Vishay · E Series

E SERIES POWER MOSFET POWERPAK 8

Vishay SIHH080N60E-T1-GE3
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[IN STOCK] In Stock: 3 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SIHH080N60E-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesE
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C32A (Tc)
Power dissipation184W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs80mOhm @ 17A, 10V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2557 pF @ 100 V
SIHH080N60E-T1-GE3
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