SIHG32N50D-GE3
Vishay
MOSFET N-CH 500V 30A TO247AC
[IN STOCK] In Stock: 1 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 30A (Tc) |
| Power dissipation | 390W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 150mOhm @ 16A, 10V |
| Gate charge (Qg) (Max) @ vgs | 96 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2550 pF @ 100 V |
SIHG32N50D-GE3
[ALLOC] verified