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Vishay SIHG100N60E-GE3

SIHG100N60E-GE3 - Vishay

MPNSIHG100N60E-GE3
End of Life

MOSFET N-CH 600V 30A TO247AC

$6.68Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesE
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SIHG100N60E-GE3 specifications
ParameterValue
SeriesE
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation208W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs100mOhm @ 13A, 10V
Gate charge (Qg) (Max) @ vgs50 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1851 pF @ 100 V