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Vishay SIHFL210TR-GE3

Vishay SIHFL210TR-GE3

MPNSIHFL210TR-GE3
End of Life

MOSFET N-CHANNEL 200V

$0.68Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SIHFL210TR-GE3 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C960mA (Tc)
Power dissipation2W (Ta), 3.1W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.5Ohm @ 580mA, 10V
Gate charge (Qg) (Max) @ vgs8.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds140 pF @ 25 V