Vishay SIHFBE30STRL-GE3
MPNSIHFBE30STRL-GE3
End of Life
MOSFET N-CHANNEL 800V
$1.87Ref. price · indicative, final on quote
PackagingTO-263 (D2PAK)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4.1A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 3Ohm @ 2.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 78 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1300 pF @ 25 V |