SIHFBC40AS-GE3

Vishay

MOSFET N-CHANNEL 600V

Vishay SIHFBC40AS-GE3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SIHFBC40AS-GE3 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6.2A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.2Ohm @ 3.7A, 10V
Gate charge (Qg) (Max) @ vgs42 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1036 pF @ 25 V
SIHFBC40AS-GE3
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