SIHF15N60E-GE3

Vishay · E Series

MOSFET N-CH 600V 15A TO220

Vishay SIHF15N60E-GE3
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Technical specifications

SIHF15N60E-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesE
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C15A (Tc)
Power dissipation34W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs280mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs78 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1350 pF @ 100 V
SIHF15N60E-GE3
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