Vishay SIHD6N80E-GE3
MPNSIHD6N80E-GE3
End of Life
MOSFET N-CH 800V 5.4A DPAK
$2.17Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesE
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | E |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 5.4A (Tc) |
| Power dissipation | 78W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 940mOhm @ 3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 44 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 827 pF @ 100 V |