SIHD5N80AE-GE3
Vishay · E Series
E SERIES POWER MOSFET DPAK (TO-2
[IN STOCK] In Stock: 5 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | E |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4.4A (Tc) |
| Power dissipation | 62.5W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 1.35Ohm @ 1.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 16.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 321 pF @ 100 V |
SIHD5N80AE-GE3
[ALLOC] verified