Vishay SIHB35N60E-GE3
MPNSIHB35N60E-GE3
End of Life
MOSFET N-CH 650V 32A D2PAK
$6.52Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 32A (Tc) |
| Power dissipation | 250W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 94mOhm @ 17A, 10V |
| Gate charge (Qg) (Max) @ vgs | 132 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2760 pF @ 100 V |