600 V, 29 A N-channel — the conduction-loss anchor
The SIHB30N60ET1-GE3 is a 600 V, 29 A N-channel power MOSFET from Vishay's E series, built on a metal-oxide trench technology. A gate driver sourcing 1 A charges the gate in roughly 130 ns — fast enough for a 50-100 kHz hard-switched converter, but the 2600 pF input capacitance at 100 V drain-source means the driver must supply peak current during the Miller plateau. Plan the gate-drive loop inductance accordingly.
Package and thermal path
The junction-to-case thermal path dominates — without adequate board-level heatsinking the die temperature rises well above the 150°C absolute maximum long before the package limit is reached. Available on Tape & Reel and Cut Tape, the reel quantity suits automated pick-and-place assembly. The ±30 V maximum gate-source rating provides margin against gate-drive overshoot in hard-switching topologies.
No stock-holding claim is made — each RFQ is handled on its own lead-time and lot-traceability terms.