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Vishay SIHB120N60E-T5-GE3 — Discrete Semiconductors

Vishay SIHB120N60E-T5-GE3 N-Channel MOSFET, 600 V, 25 A

MPNSIHB120N60E-T5-GE3
End of Life

Vishay E Series N-Channel MOSFET, 600 Vdss, 25 A Id, 120 mOhm Rds(on), D²PAK (TO-263), Surface Mount, Tape & Reel.

$5.34Ref. price · indicative, final on quote
Vishay SIHB120N60E-T5-GE3 datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SeriesE
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

SIHB120N60E-T5-GE3 specifications
ParameterValue
SeriesE
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C25A (Tc)
Power dissipation179W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs120mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1562 pF @ 100 V

Product details

Gate charge and switching speed

The SIHB120N60E-T5-GE3: These numbers tell the gate-drive designer how much current the driver must supply to hit the target switching frequency — a 45 nC gate charge at 100 kHz switching draws 4.5 mA average from the driver, well within the capability of a standard MOSFET driver IC. The 1562 pF input capacitance also influences the turn-on delay; a driver with 2 A peak source current charges the gate in roughly 23 ns, keeping switching losses manageable in hard-switched topologies.

Thermal and package integration

Housed in the D²PAK (TO-263) surface-mount package, the SIHB120N60E-T5-GE3 dissipates up to 179 W at the case. The exposed drain tab on the top of the package must be soldered to a copper pad on the PCB with adequate thermal vias to the inner ground plane — the junction-to-case thermal path is the limiting factor, not the package itself.

Frequently asked questions

What is the closest functional alternative to SIHB120N60E-T5-GE3?

The SIHB053N60E-GE3 is a higher-current sibling in the same E series, rated 47 A continuous drain and 54 mOhm Rds(on) — roughly double the current capability at half the on-resistance. The SIHB30N60E-GE3 is closer in current (29 A) but has a higher gate charge (130 nC) and slightly higher on-resistance (125 mOhm). Both share the same D²PAK footprint and 600 V rating, so a board designed for the SIHB120N60E-T5-GE3 can accept either without layout changes, though the gate-drive and thermal design must be re-evaluated for the different gate charge and power dissipation.