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Vishay SIHB065N60E-GE3

Vishay SIHB065N60E-GE3

MPNSIHB065N60E-GE3
End of Life

MOSFET N-CH 600V 40A D2PAK

$6.97Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesE
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SIHB065N60E-GE3 specifications
ParameterValue
SeriesE
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C40A (Tc)
Power dissipation250W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs65mOhm @ 16A, 10V
Gate charge (Qg) (Max) @ vgs74 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2700 pF @ 100 V