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Vishay SIHA6N65E-GE3 — Discrete Semiconductors

Vishay SIHA6N65E-GE3 N-Channel MOSFET, 650V, 7A

MPNSIHA6N65E-GE3
End of Life

Vishay E Series SIHA6N65E-GE3 N-Channel MOSFET, 650 Vdss, 7 A continuous drain, 600 mOhm Rds(on), TO-220 Full Pack, Through Hole.

$2.08Ref. price · indicative, final on quote
Vishay SIHA6N65E-GE3 datasheet (PDF)
PackagingTO-220-3 Full Pack
SeriesE
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

SIHA6N65E-GE3 specifications
ParameterValue
SeriesE
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Tc)
Power dissipation31W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs600mOhm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs48 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1640 pF @ 100 V

Product details

Device identity and headline ratings

The SIHA6N65E-GE3: Housed in a TO-220 Full Pack through-hole package, the fully encapsulated tab isolates the heatsink from the drain potential — a design choice that simplifies mounting without an insulating pad in systems where the heatsink is chassis-grounded.

Switching and conduction parametrics

Total gate charge is 48 nC at Vgs = 10 V; this figure, combined with the input capacitance of 1640 pF at Vds = 100 V, determines the gate-driver current required to achieve the target switching speed. Maximum gate-to-source voltage is ±30 V, providing margin against overshoot on the gate drive in hard-switched topologies.

Temperature grade and operating environment

Maximum power dissipation is 31 W at case temperature Tc — the thermal path through the TO-220 Full Pack tab to a heatsink governs the usable continuous current in a given enclosure.