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Vishay SIHA11N80E-GE3

Vishay SIHA11N80E-GE3

MPNSIHA11N80E-GE3
End of Life

MOSFET N-CH 800V 12A TO220

$3.61Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesE
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SIHA11N80E-GE3 specifications
ParameterValue
SeriesE
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation34W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs440mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs88 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1670 pF @ 100 V