Vishay SIDR638DP-T1-GE3
MPNSIDR638DP-T1-GE3
End of Life
MOSFET N-CH 40V 100A PPAK SO-8DC
$2.12Ref. price · indicative, final on quote
PackagingPowerPAK® SO-8
RoHSROHS3 Compliant
SeriesTrenchFET® Gen IV
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® Gen IV |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +20V, -16V |
| Technology | MOSFET (Metal Oxide) |
| Case | PowerPAK® SO-8 |
| Vgs(th) (Max) @ id | 2.3V @ 250µA |
| Rds on (Max) @ id, vgs | 0.88mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 204 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 10500 pF @ 20 V |