Vishay SIDR626DP-T1-GE3
MPNSIDR626DP-T1-GE3
End of Life
MOSFET N-CH 60V 42.8A/100A PPAK
$2.9Ref. price · indicative, final on quote
PackagingPowerPAK® SO-8
RoHSROHS3 Compliant
SeriesTrenchFET® Gen IV
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® Gen IV |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 42.8A (Ta), 100A (Tc) |
| Power dissipation | 6.25W (Ta), 125W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | PowerPAK® SO-8 |
| Vgs(th) (Max) @ id | 3.4V @ 250µA |
| Rds on (Max) @ id, vgs | 1.7mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 102 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5130 pF @ 30 V |