Vishay SIDR220DP-T1-RE3
MPNSIDR220DP-T1-RE3
End of Life
N-CHANNEL 25-V (D-S) MOSFET
$2.82Ref. price · indicative, final on quote
PackagingPowerPAK® SO-8
SeriesTrenchFET® Gen IV
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® Gen IV |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 25 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 87.7A (Ta), 100A (Tc) |
| Power dissipation | 6.25W (Ta), 125W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +16V, -12V |
| Technology | MOSFET (Metal Oxide) |
| Case | PowerPAK® SO-8 |
| Vgs(th) (Max) @ id | 2.1V @ 250µA |
| Rds on (Max) @ id, vgs | 5.8mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 200 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 10850 pF @ 10 V |