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Vishay SIB457EDK-T1-GE3

Vishay SIB457EDK-T1-GE3

MPNSIB457EDK-T1-GE3
End of Life

MOSFET P-CH 20V 9A PPAK SC75-6

$0.56Ref. price · indicative, final on quote
PackagingPowerPAK® SC-75-6
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SIB457EDK-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)4.5V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation2.4W (Ta), 13W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® SC-75-6
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs35mOhm @ 4.8A, 4.5V
Gate charge (Qg) (Max) @ vgs44 nC @ 8 V