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Vishay SIB4317EDK-T1-GE3

Vishay SIB4317EDK-T1-GE3

MPNSIB4317EDK-T1-GE3
End of Life

P-CHANNEL 30-V (D-S) MOSFET POWE

$0.46Ref. price · indicative, final on quote
PackagingPowerPAK® SC-75-6
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SIB4317EDK-T1-GE3 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 10V
Current - continuous drain (Id) @ 25°C4.3A (Ta), 4.5A (Tc)
Power dissipation1.95W (Ta), 10W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® SC-75-6
Vgs(th) (Max) @ id1.3V @ 250µA
Rds on (Max) @ id, vgs65mOhm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs23 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds600 pF @ 15 V