Vishay SIAA02DJ-T1-GE3
MPNSIAA02DJ-T1-GE3
End of Life
MOSFET N-CH 20V 22A/52A PPAK
$0.61Ref. price · indicative, final on quote
PackagingPowerPAK® SC-70-6
SeriesTrenchFET® Gen IV
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® Gen IV |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 22A (Ta), 52A (Tc) |
| Power dissipation | 3.5W (Ta), 19W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +12V, -8V |
| Technology | MOSFET (Metal Oxide) |
| Case | PowerPAK® SC-70-6 |
| Vgs(th) (Max) @ id | 1.6V @ 250µA |
| Rds on (Max) @ id, vgs | 4.7mOhm @ 8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 33 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1250 pF @ 10 V |