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Vishay SIA938DJT-T1-GE3

Vishay SIA938DJT-T1-GE3

MPNSIA938DJT-T1-GE3
End of Life

DUAL N-CHANNEL 20-V (D-S) MOSFET

$0.68Ref. price · indicative, final on quote
PackagingPowerPAK® SC-70-6 Dual
SeriesTrenchFET® Gen IV
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SIA938DJT-T1-GE3 specifications
ParameterValue
SeriesTrenchFET® Gen IV
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C4.5A (Ta), 4.5A (Tc)
Power - max1.9W (Ta), 7.8W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
CasePowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs21.5mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs11.5nC @ 10V
Input capacitance (Ciss) (Max) @ vds425pF @ 10V