SIA921EDJ-T1-GE3

Vishay · TrenchFET® Series

MOSFET 2P-CH 20V 4.5A SC70-6

Vishay SIA921EDJ-T1-GE3
Download datasheet (PDF)
[IN STOCK] In Stock: 18 pcs
$1.09/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SIA921EDJ-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C4.5A
Power - max7.8W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 P-Channel (Dual)
CasePowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ id1.4V @ 250µA
Rds on (Max) @ id, vgs59mOhm @ 3.6A, 4.5V
Gate charge (Qg) (Max) @ vgs23nC @ 10V
SIA921EDJ-T1-GE3
[ALLOC] verified
Quote