SIA517DJ-T1-GE3

Vishay · TrenchFET® Series

MOSFET N/P-CH 12V 4.5A SC-70-6

Vishay SIA517DJ-T1-GE3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SIA517DJ-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage12V
Current - continuous drain (Id) @ 25°C4.5A
Power - max6.5W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
CasePowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs29mOhm @ 5A, 4.5V
Gate charge (Qg) (Max) @ vgs15nC @ 8V
Input capacitance (Ciss) (Max) @ vds500pF @ 6V
SIA517DJ-T1-GE3
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