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Vishay SIA469DJ-T1-GE3

Vishay SIA469DJ-T1-GE3

MPNSIA469DJ-T1-GE3
End of Life

MOSFET P-CH 30V 12A PPAK SC70-6

$0.48Ref. price · indicative, final on quote
PackagingPowerPAK® SC-70-6
RoHSROHS3 Compliant
SeriesTrenchFET® Gen III
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SIA469DJ-T1-GE3 specifications
ParameterValue
SeriesTrenchFET® Gen III
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation15.6W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® SC-70-6
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs26.5mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs15 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1020 pF @ 15 V