Skip to main content
Vishay SIA445EDJ-T1-GE3

Vishay SIA445EDJ-T1-GE3

MPNSIA445EDJ-T1-GE3
End of Life

MOSFET P-CH 20V 12A PPAK SC70-6

$0.65Ref. price · indicative, final on quote
PackagingPowerPAK® SC-70-6
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SIA445EDJ-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation3.5W (Ta), 19W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® SC-70-6
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs16.5mOhm @ 7A, 4.5V
Gate charge (Qg) (Max) @ vgs72 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2130 pF @ 10 V