SIA441DJ-T1-GE3

Vishay · TrenchFET® Series

MOSFET P-CH 40V 12A PPAK SC70-6

Vishay SIA441DJ-T1-GE3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SIA441DJ-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation19W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® SC-70-6
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs47mOhm @ 4.4A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds890 pF @ 20 V
SIA441DJ-T1-GE3
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