SIA4265EDJ-T1-GE3
Vishay · TrenchFET® Series
P-CHANNEL 20-V (D-S) MOSFET POWE
[IN STOCK] In Stock: 17 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 7.8A (Ta), 9A (Tc) |
| Power dissipation | 2.9W (Ta), 15.6W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | PowerPAK® SC-70-6 |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 32mOhm @ 4A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 36 nC @ 8 V |
| Input capacitance (Ciss) (Max) @ vds | 1180 pF @ 0 V |
SIA4265EDJ-T1-GE3
[ALLOC] verified