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Vishay SIA414DJ-T1-GE3

Vishay SIA414DJ-T1-GE3

MPNSIA414DJ-T1-GE3
End of Life

MOSFET N-CH 8V 12A PPAK SC70-6

$0.95Ref. price · indicative, final on quote
PackagingPowerPAK® SC-70-6
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SIA414DJ-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage8 V
Drive voltage (Max rds on, min rds on)1.2V, 4.5V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation3.5W (Ta), 19W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±5V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® SC-70-6
Vgs(th) (Max) @ id800mV @ 250µA
Rds on (Max) @ id, vgs11mOhm @ 9.7A, 4.5V
Gate charge (Qg) (Max) @ vgs32 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1800 pF @ 4 V