Skip to main content
Vishay SIA413DJ-T1-GE3

Vishay SIA413DJ-T1-GE3

MPNSIA413DJ-T1-GE3
End of Life

MOSFET P-CH 12V 12A PPAK SC70-6

$0.95Ref. price · indicative, final on quote
PackagingPowerPAK® SC-70-6
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SIA413DJ-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation3.5W (Ta), 19W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® SC-70-6
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs29mOhm @ 6.7A, 4.5V
Gate charge (Qg) (Max) @ vgs57 nC @ 8 V
Input capacitance (Ciss) (Max) @ vds1800 pF @ 10 V