SIA413DJ-T1-GE3

Vishay · TrenchFET® Series

MOSFET P-CH 12V 12A PPAK SC70-6

Vishay SIA413DJ-T1-GE3
[IN STOCK] In Stock: 875 pcs
$0.24/ pc

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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SIA413DJ-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation3.5W (Ta), 19W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® SC-70-6
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs29mOhm @ 6.7A, 4.5V
Gate charge (Qg) (Max) @ vgs57 nC @ 8 V
Input capacitance (Ciss) (Max) @ vds1800 pF @ 10 V
SIA413DJ-T1-GE3
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