SIA112LDJ-T1-GE3
Vishay · TrenchFET® Series
N-CHANNEL 100-V (D-S) MOSFET POW
[IN STOCK] In Stock: 12 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 3.5A (Ta), 8.8A (Tc) |
| Power dissipation | 2.9W (Ta), 15.6W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | PowerPAK® SC-70-6 |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 14mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 11.8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 355 pF @ 50 V |
SIA112LDJ-T1-GE3
[ALLOC] verified