SI9933CDY-T1-E3
Vishay · TrenchFET® Series
MOSFET 2P-CH 20V 4A 8SOIC
[IN STOCK] In Stock: 1 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| FET type | 2 P-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 4A |
| Power - max | 3.1W |
| Operating temperature | -50°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 1.4V @ 250µA |
| Rds on (Max) @ id, vgs | 58mOhm @ 4.8A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 26nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 665pF @ 10V |
SI9933CDY-T1-E3
[ALLOC] verified