SI9926CDY-T1-GE3
Vishay · TrenchFET® Series
MOSFET 2N-CH 20V 8A 8-SOIC
[IN STOCK] In Stock: 198 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| FET type | 2 N-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 8A |
| Power - max | 3.1W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 1.5V @ 250µA |
| Rds on (Max) @ id, vgs | 18mOhm @ 8.3A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 33nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 1200pF @ 10V |
SI9926CDY-T1-GE3
[ALLOC] verified