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Vishay SI9926CDY-T1-E3

SI9926CDY-T1-E3 - Vishay

MPNSI9926CDY-T1-E3
End of Life

MOSFET 2N-CH 20V 8A 8-SOIC

$1.34Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI9926CDY-T1-E3 specifications
ParameterValue
SeriesTrenchFET®
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C8A
Power - max3.1W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs18mOhm @ 8.3A, 4.5V
Gate charge (Qg) (Max) @ vgs33nC @ 10V
Input capacitance (Ciss) (Max) @ vds1200pF @ 10V