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Vishay SI9433BDY-T1-GE3

Vishay SI9433BDY-T1-GE3

MPNSI9433BDY-T1-GE3
End of Life

MOSFET P-CH 20V 4.5A 8SO

$0.91Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI9433BDY-T1-GE3 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.7V, 4.5V
Current - continuous drain (Id) @ 25°C4.5A (Ta)
Power dissipation1.3W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs40mOhm @ 6.2A, 4.5V
Gate charge (Qg) (Max) @ vgs14 nC @ 4.5 V