SI8802DB-T2-E1
Vishay · TrenchFET® Series
MOSFET N-CH 8V 4MICROFOOT
[IN STOCK] In Stock: 126 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 8 V |
| Drive voltage (Max rds on, min rds on) | 1.2V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 3A (Ta) |
| Power dissipation | 500mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±5V |
| Technology | MOSFET (Metal Oxide) |
| Case | 4-XFBGA |
| Vgs(th) (Max) @ id | 700mV @ 250µA |
| Rds on (Max) @ id, vgs | 54mOhm @ 1A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 6.5 nC @ 4.5 V |
SI8802DB-T2-E1
[ALLOC] verified